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Design of Setup for Laser Induced Plasma Etching

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F24%3A00617414" target="_blank" >RIV/68081731:_____/24:00617414 - isvavai.cz</a>

  • Result on the web

    <a href="https://ieeexplore.ieee.org/document/10652276" target="_blank" >https://ieeexplore.ieee.org/document/10652276</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/IVNC63480.2024.10652276" target="_blank" >10.1109/IVNC63480.2024.10652276</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Design of Setup for Laser Induced Plasma Etching

  • Original language description

    Plasma etching introduces a physically activated chemical process highly utilized in the semiconductor industry. However, for the creation of etched structures mask has to be prepared on top of the etched surfaces. This is usually achieved by electron beam lithography, which adds to the complexity and financial demands of the overall process. We present the design of a setup for maskless plasma etching, which utilizes a tightly focused ultrashort laser pulse for the ignition of etching plasma in a custom vacuum chamber with a connection to a gas-containing etching species. In addition, etched structures are written into the surface of sample by scanning with the vacuum chamber with relation to fixed laser focus. This enables maskless 3D etching of samples with a less complicated technological process.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    10306 - Optics (including laser optics and quantum optics)

Result continuities

  • Project

    <a href="/en/project/TN02000020" target="_blank" >TN02000020: Centre of Advanced Electron and Photonic Optics</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2024

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2024 37th International Vacuum Nanoelectronics Conference, IVNC 2024

  • ISBN

    979-8-3503-7977-8

  • ISSN

    2164-2370

  • e-ISSN

  • Number of pages

    2

  • Pages from-to

    44-45

  • Publisher name

    IEEE

  • Place of publication

    New York

  • Event location

    Brno

  • Event date

    Jul 15, 2024

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    001310530600005