Dopant Characterization of Silicon Carbide using Secondary Electron Microscopy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F25%3A00647012" target="_blank" >RIV/68081731:_____/25:00647012 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Dopant Characterization of Silicon Carbide using Secondary Electron Microscopy
Original language description
MOTLOVÁ, T., POKORNÁ, Z., MIKA, F., KNÁPEK, A. Dopant Characterization of Silicon Carbide using Secondary Electron Microscopy. In: OTÁHAL, A., KNÁPEK, A., SKÁCEL, J., NOVOTNÁ, V., eds. IMAPS Flash Conference. 11th International Microelectronics Assembly and Packaging Society Flash Conference. Brno: Brno University of Technology, FEEC, 2025, č. 25, s. 47-48. ISBN 978-80-214-6369-1. Silicon Carbide (SiC) is a critical material in the microchip industry, valued for its excellent thermal, mechanical, and electrical properties. These attributes make SiC well-suited for high power electronics in diverse fields, including electric vehicles and space exploration. The performance and reliability of SiC devices are linked to the precise control and spatial distribution of dopants within the material. Characterizing these dopants is therefore important in semiconductor research and manufacturing. In our research, we are using Secondary Electron Microscopy (SEM), mainly thanks to its capacity to generate Secondary Electron Dopant Contrast, as an excellent non-destructive method for visualizing and profiling dopants in SiC devices.
Czech name
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Czech description
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Project
<a href="/en/project/GF25-19981L" target="_blank" >GF25-19981L: INFASCOPE – Integrated Field emission electron source analysis</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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