Atmospheric pressure plasma jet pattern transfer using photolithographic masks

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F25%3A00648767" target="_blank" >RIV/68081731:_____/25:00648767 - isvavai.cz</a>
Result on the web
<a href="https://www.spiedigitallibrary.org/conference-proceedings-of-spie/13789/3073444/Atmospheric-pressure-plasma-jet-pattern-transfer-using-photolithographic-masks/10.1117/12.3073444.full" target="_blank" >https://www.spiedigitallibrary.org/conference-proceedings-of-spie/13789/3073444/Atmospheric-pressure-plasma-jet-pattern-transfer-using-photolithographic-masks/10.1117/12.3073444.full</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.3073444" target="_blank" >10.1117/12.3073444</a>

Result language
angličtina
Original language name
Atmospheric pressure plasma jet pattern transfer using photolithographic masks
Original language description
The transfer of photolithographically generated structures using ion beams/plasmas is a widely used technology with a wide range of applications. However, these techniques generally require expensive and high-maintenance vacuum systems, which is why a new atmospheric approach of pattern transfer is being pursued using atmospheric pressure plasma jet (APPJ) etching. In the present study, pattern transfer by plasma jet with a photopolymer masking into fused silica as a substrate is investigated. Etching was carried out with varying mask line widths and then subsequently analyzed using white light interferometry (WLI) and atomic force microscopy (AFM). It was shown that structures can be transferred into fused silica using a standard photoresist (AZ 4562). The faster etching of the resist significantly widens the valleys of the structure. Smaller line widths lead to a smaller etching depth, whereby the depth is reduced from 110 nm at 200 µm gap width of the mask to 30 nm at 1 µm for identical etching conditions.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Twelfth European Seminar on Precision Optics Manufacturing
ISBN
978-1-5106-9457-6
ISSN
0277-786X
e-ISSN
1996-756X
Number of pages
4
Pages from-to
1378904
Publisher name
SPIE
Place of publication
Bellingham
Event location
Teisnach
Event date
May 6, 2025
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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