Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020035" target="_blank" >RIV/68378271:_____/02:02020035 - isvavai.cz</a>

Alternative codes found

RIV/00216208:11320/02:00003593 RIV/00216208:11320/02:00004111

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions.

Original language description

We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation in picosecond pump and probe measurements.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Physics. A

ISSN

0947-8396

e-ISSN

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Volume of the periodical

74

Issue of the periodical within the volume

N/A

Country of publishing house

DE - GERMANY

Number of pages

4

Pages from-to

253-256

UT code for WoS article

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EID of the result in the Scopus database

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