Raman scattering study of type II GaInAsSb/InAs heterostructures.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020137" target="_blank" >RIV/68378271:_____/02:02020137 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Raman scattering study of type II GaInAsSb/InAs heterostructures.

Original language description

Ga 1-x In x As y Sb 1-y quaternary solid solutions lattice-matched to the InAs (001) substrate with composition in range 0.06.le.x.le.0.22 were grown by liquid phase epitaxy. The assignment of the observed modes to GaAs-like and (GaSb+InAS)-like mixturemodes is discussed.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA102%2F99%2F0414" target="_blank" >GA102/99/0414: MOVPE prepared materials and structures for electronic and optoelectronic devices</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Crystal Research and Technology

ISSN

0232-1300

e-ISSN

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Volume of the periodical

37

Issue of the periodical within the volume

2-3

Country of publishing house

DE - GERMANY

Number of pages

9

Pages from-to

259-267

UT code for WoS article

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EID of the result in the Scopus database

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