ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F11%3A00057585" target="_blank" >RIV/00216224:14740/11:00057585 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS
Original language description
The electronic structure of InAs quantum dots (QD) self assembled on GaAs and covered with the GaAs(1-y) Sb(y) strain reducing layer displays several interesting features, depending on the geometry and the composition of the ternary material. The basic motivation is the possible lowering of the emission energy towards the prominent communication bands of 1.3 and 1.55 microns. Using the envelope function theory, we investigate the localization of electrons and holes. The most remarkable finding is the localization of holes outside InAs, close to the base of the dot, for larger value of the Sb content. Thus, typeII molecular-like states are formed as the results of the strain and piezoelectric fields. The parameters of the ternary layer play a crucial role in forming the properties of the QD structures; some of them cannot be easily obtained by X-ray techniques.
Czech name
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Czech description
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Project
<a href="/en/project/GA202%2F09%2F0676" target="_blank" >GA202/09/0676: Impact of capping layers on electronic states in quantum dots</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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