Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00431316" target="_blank" >RIV/68378271:_____/14:00431316 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.033" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.02.033</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.033" target="_blank" >10.1016/j.apsusc.2014.02.033</a>
Alternative languages
Result language
angličtina
Original language name
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
Original language description
The aim of this work is to influence QD formation by improving the lower and upper InAs/GaAs QD interface quality. Lower interface: a good epitaxial surface planarity is required for QD formation with high QD density and narrow size distribution. We demonstrate the improvement of the QD size distribution and homogeneity, when the growth rate of the buffer layer was decreased. Upper interface formed during the covering process: InAs quantum dots were capped by GaAs or by GaAsSb. The presence of Sb atomsin covering layer strongly influences the interface abruptness. In the case of GaAs covering layer, an InGaAs layer with gradual decrease of In concentration is unintentionally formed at the interface between InAs and GaAs. The presence of Sb in GaAsSb covering layer helps to form abrupt interface between InAs and covering layer. An optimal GaAsSb composition profile is suggested to prevent dissolution of QDs during the covering process and to minimize the amount of surfacting In atoms.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
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Volume of the periodical
301
Issue of the periodical within the volume
SI
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
173-177
UT code for WoS article
000335095600027
EID of the result in the Scopus database
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