Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00447828" target="_blank" >RIV/68378271:_____/15:00447828 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.10.026" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2014.10.026</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.10.026" target="_blank" >10.1016/j.jcrysgro.2014.10.026</a>

Result language
angličtina
Original language name
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy
Original language description
Quantum dot (QD) and multiple QD structures with InAs/GaAs QDs covered by GaAsSb strain reducing layer (SRL) prepared by MOVPE are presented. The growth of structures was studied in situ by reflectance anisotropy spectroscopy (RAS), which offers direct observation of processes during the structure growth such as QD formation, and dissolution or surfacting of In and Sb atoms. Enhanced In surfacting was observed for structures with GaAsSb SRL. Possible ways, how to suppress surfacting of both types of atoms and how to prevent their transport on epitaxial surface to the subsequent QD layer in multiple QD layer structures, are suggested. Different interruptions, growth rates and temperatures of the separation layer growth are discussed with respect to thesuppression of undesired surfacting of In and Sb atoms. The conclusions derived from RAS measurements are supported by HRTEM, AFM or PL results.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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