Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00392283" target="_blank" >RIV/68378271:_____/13:00392283 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2012.08.007" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2012.08.007</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2012.08.007" target="_blank" >10.1016/j.jcrysgro.2012.08.007</a>

Result language
angličtina
Original language name
Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Original language description
We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs1-xSbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients in SRL, constant, increasing and decreasing during the growth. Both types of non-constant gradients help us to prevent transition of the InAs(QD)/GaAsSb(SRL) heterojunction from type I to type II, to increaseemission wavelength and to retain high luminescence intensity of these types of QD structures. Comparison of photoluminescence of samples with different concentration gradients and similar average Sb concentration in SRLs is shown. The longest wavelengthof type I ground state transition was achieved on sample with decreasing gradation of Sb content in SRL - 1399 nm (0.886 eV).
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GAP102%2F10%2F1201" target="_blank" >GAP102/10/1201: Quantum dots for detectors and other devices</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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