InAs/GaAs quantum dots covered by GaAsSb strain reducing layer

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F12%3A00212307" target="_blank" >RIV/68407700:21340/12:00212307 - isvavai.cz</a>

Result on the web

<a href="https://www.confer.cz/proceedings/nanocon/2012.pdf#page=204" target="_blank" >https://www.confer.cz/proceedings/nanocon/2012.pdf#page=204</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

InAs/GaAs quantum dots covered by GaAsSb strain reducing layer

Original language description

We have prepared and studied InAs/GaAs quantum dots (QDs) by the Metalorganic Vapour Phase Epitaxy in Stranski-Krastanow self-organized growth mode at temperature 510°C and covered by GaAsSb strain reducing layer (SRL). We found out that for higher temperature (510°C) the Sb incorporation into the SRL is decreased. Two explanations are suggested: first the higher strain on the apex of bigger QDs, second increased Sb surfacting on the growth surface. However, unincorporated surfacting Sb atoms also prevent QDs dissolution. Increased QD size together with decreased Sb incorporation helped us to obtain type I QD structure with long wavelength emission at 1400 nm.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

21001 - Nano-materials (production and properties)

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

NANOCON 2012, 4th International Conference

ISBN

978-80-87294-35-2

ISSN

2694-930X

e-ISSN

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Number of pages

5

Pages from-to

204-208

Publisher name

TANGER

Place of publication

Ostrava

Event location

Brno

Event date

Oct 23, 2012

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000333697100037