Pulsed laser deposition of CN x films: role of r.f. nitrogen plasma activation for the film structure formation.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020217" target="_blank" >RIV/68378271:_____/02:02020217 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Pulsed laser deposition of CN x films: role of r.f. nitrogen plasma activation for the film structure formation.

Original language description

Thin CN x films were deposited by pulsed laser deposition equipped with KrF excimer laser. An additional radio-frequemcy discharge of the nitrogen gas was appled.The role of atomic nitrogen in CN radical formation was studied using emission spectroscopy.The composition of the films was measured by WDX. The N/C ratio of all films was approximately 1 and did not vary with N pressure.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/LN00A015" target="_blank" >LN00A015: Research center for optics</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

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Volume of the periodical

11

Issue of the periodical within the volume

N/A

Country of publishing house

CH - SWITZERLAND

Number of pages

4

Pages from-to

1223-1226

UT code for WoS article

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EID of the result in the Scopus database

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