Transport mechanism and spectral characteristics of GaSb/GaAs heterostructures prepared by MOVPE.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F02%3A02020370" target="_blank" >RIV/68378271:_____/02:02020370 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Transport mechanism and spectral characteristics of GaSb/GaAs heterostructures prepared by MOVPE.
Original language description
The purpose of our work was the evaluation of GaSb/GaAs heterostructures grown on GaAs substrateas for the thermovoltaics.heterojunctions p-GaSb/n-GaAs with p-layer prepared by MOVPE method at growth temperatures from 500 to 560 o C were investigated. Our results show that p-GaSb/n-GaAs heterojunctions prepared by this MOVPE method are not enough suitable for use in TPV.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F99%2F0414" target="_blank" >GA102/99/0414: MOVPE prepared materials and structures for electronic and optoelectronic devices</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Seventh European Photovoltaic Solar Energy Conference.
ISBN
88-900442-3-3
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
146-148
Publisher name
WIP-Munich and ETA-Florence
Place of publication
Florence
Event location
Munich [DE]
Event date
Oct 22, 2001
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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