Scribing into hydrogenated diamond surfaces using atomic force microscopy.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A02030310" target="_blank" >RIV/68378271:_____/03:02030310 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Scribing into hydrogenated diamond surfaces using atomic force microscopy.
Original language description
Using negatively biased silicon cantilevers, microscopic patterns can be scribed into a diamond surface, up to depth of 3 nm. The inscribed patterns exhibit different electronic properties to the rest of surface, namely electron affinity and conductivity.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
—
Volume of the periodical
82
Issue of the periodical within the volume
19
Country of publishing house
US - UNITED STATES
Number of pages
3
Pages from-to
3336-3338
UT code for WoS article
—
EID of the result in the Scopus database
—