Silicon thin films deposited at very low substrate temperatures.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A02030314" target="_blank" >RIV/68378271:_____/03:02030314 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/03:00000498
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Silicon thin films deposited at very low substrate temperatures.
Original language description
The influence of the substrate temperature (in the wide range of 35-200 o C) on the structure and properties of silicon thin films was studied. It seems that low substrate temperature a parameter window exists where the silicon thin films can be grown with the properties combining both crystalline and amorphous behavior.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ME%20537" target="_blank" >ME 537: Materials for thinfilmed sunelements in low temperatures on plastic pad</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
442
Issue of the periodical within the volume
N/A
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
163-166
UT code for WoS article
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EID of the result in the Scopus database
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