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Silicon thin films deposited at very low substrate temperatures.

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A02030314" target="_blank" >RIV/68378271:_____/03:02030314 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/03:00000498

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Silicon thin films deposited at very low substrate temperatures.

  • Original language description

    The influence of the substrate temperature (in the wide range of 35-200 o C) on the structure and properties of silicon thin films was studied. It seems that low substrate temperature a parameter window exists where the silicon thin films can be grown with the properties combining both crystalline and amorphous behavior.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ME%20537" target="_blank" >ME 537: Materials for thinfilmed sunelements in low temperatures on plastic pad</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2003

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Thin Solid Films

  • ISSN

    0040-6090

  • e-ISSN

  • Volume of the periodical

    442

  • Issue of the periodical within the volume

    N/A

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    4

  • Pages from-to

    163-166

  • UT code for WoS article

  • EID of the result in the Scopus database