Comparision of diamond nucleation in DC and AC substrate bias mode.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A02030395" target="_blank" >RIV/68378271:_____/03:02030395 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Comparision of diamond nucleation in DC and AC substrate bias mode.
Original language description
Diamond films were grown by modified hot filament (HF) CVD technique, employing the double bias configuration. Prior to the diamond growth, a voltage source was connected between the substrate and the filaments placed above the substate to enhance the diamond nucleation.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
433
Issue of the periodical within the volume
N/A
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
73-77
UT code for WoS article
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EID of the result in the Scopus database
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