Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00324998" target="_blank" >RIV/68378271:_____/09:00324998 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy

Original language description

We present the results of optical pump - terahertz probe experiments applied to a set of thin film microcrystalline silicon samples, with structures varying from amorphous to fully microcrystalline. The samples were excited at wavelengths 800 and 400 nmand studied at temperatures down to 20 K. The character of nanoscopic electrical transport properties markedly change on a sub-picosecond time scale. The initial transient photoconductivity of the samples is dominated by hot free carriers with a mobilityof 70 cm2/Vs. These carriers are rapidly (within 0.6 ps) trapped into weakly localized hopping states. The hopping process dominates the THz spectra on the picosecond and sub-ns time scales. The saturated high-frequency value of the hopping mobility islimited by the sample disorder in the amorphous sample and by electron-phonon interaction for microcrystalline samples.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physical Review. B

ISSN

1098-0121

e-ISSN

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Volume of the periodical

79

Issue of the periodical within the volume

11

Country of publishing house

US - UNITED STATES

Number of pages

13

Pages from-to

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UT code for WoS article

000264768900088

EID of the result in the Scopus database

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