Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00331417" target="_blank" >RIV/68378271:_____/09:00331417 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1

Original language description

Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island size distribution wereobtained for various deposition rates and coverage. Important role of C-type defects at adsorption of metal atoms was observed. Measured growth characteristics were simulated using a microscopic model with anisotropic surface diffusion and forbidden zones along the metal chains. An analysis of experimental and simulation data shows that detachment of indium adatoms from the chains substantially influences a growth scenario and results in monotonously decreasing chain length distribution function at lowcoverage. Diffusion barriers determined from the simulations correspond to almost isotropic diffusion of indium adatoms on the surface.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA202%2F06%2F0049" target="_blank" >GA202/06/0049: In-vivo STM study of atomically resolved processes at growth of metal nanostructures on Si(100) surfaces</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physical Review. B

ISSN

1098-0121

e-ISSN

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Volume of the periodical

79

Issue of the periodical within the volume

16

Country of publishing house

US - UNITED STATES

Number of pages

9

Pages from-to

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UT code for WoS article

000265945200102

EID of the result in the Scopus database

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