Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1
Result description
Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island size distribution wereobtained for various deposition rates and coverage. Important role of C-type defects at adsorption of metal atoms was observed. Measured growth characteristics were simulated using a microscopic model with anisotropic surface diffusion and forbidden zones along the metal chains. An analysis of experimental and simulation data shows that detachment of indium adatoms from the chains substantially influences a growth scenario and results in monotonously decreasing chain length distribution function at lowcoverage. Diffusion barriers determined from the simulations correspond to almost isotropic diffusion of indium adatoms on the surface.
Keywords
atomic chainssurface growthnanostructuresindiumsiliconadatom diffusionSTMkinetic MCsimulation
The result's identifiers
Result code in IS VaVaI
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1
Original language description
Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island size distribution wereobtained for various deposition rates and coverage. Important role of C-type defects at adsorption of metal atoms was observed. Measured growth characteristics were simulated using a microscopic model with anisotropic surface diffusion and forbidden zones along the metal chains. An analysis of experimental and simulation data shows that detachment of indium adatoms from the chains substantially influences a growth scenario and results in monotonously decreasing chain length distribution function at lowcoverage. Diffusion barriers determined from the simulations correspond to almost isotropic diffusion of indium adatoms on the surface.
Czech name
—
Czech description
—
Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review. B
ISSN
1098-0121
e-ISSN
—
Volume of the periodical
79
Issue of the periodical within the volume
16
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
—
UT code for WoS article
000265945200102
EID of the result in the Scopus database
—
Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BM - Solid-state physics and magnetism
Year of implementation
2009