Time-resolved measurements of optical gain and photoluminescence in silicon nanocrystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00332027" target="_blank" >RIV/68378271:_____/09:00332027 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Time-resolved measurements of optical gain and photoluminescence in silicon nanocrystals
Original language description
We performed time-resolved photoluminescence and optical gain spectroscopy in small Si-ncs (core diameter of 2-3 nm) embedded at very high densities in an SiO2 based sol-gel matrix. Optical gain was studied separately from both observed emission components - the F-band peaking at 430 nm, decaying in ns scale and the S-band at 620 nm, decaying in microsecond scale.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů