Optical gain at the F-band of oxidized silicon nanocrystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00207020" target="_blank" >RIV/00216208:11320/09:00207020 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/09:00331758

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Optical gain at the F-band of oxidized silicon nanocrystals

Original language description

In this paper we present time-resolved optical gain spectroscopy using the variable stripe length technique in combination with the shifting excitation spot technique under pumping with nanosecond laser pulses. Measurements reveal positive optical gain on a nanosecond time scale at 430 nm (F-band), accompanied by spectral narrowing and a threshold behaviour of the amplified spontaneous emission as a function of the excitation intensity. We show that the presence of the slow-red (S-band) emission component critically influences the observation of stimulated emission from the F-band.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Physics. D. Applied Physics

ISSN

0022-3727

e-ISSN

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Volume of the periodical

42

Issue of the periodical within the volume

13

Country of publishing house

GB - UNITED KINGDOM

Number of pages

5

Pages from-to

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UT code for WoS article

000267219000011

EID of the result in the Scopus database

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