Optical gain of the 1.54 mu m emission in MBE-grown Si:Er nanolayers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10081896" target="_blank" >RIV/00216208:11320/10:10081896 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Optical gain of the 1.54 mu m emission in MBE-grown Si:Er nanolayers
Original language description
We present investigations of the optical gain cross section of 1.54 mým Er-related emission at 4.2 K in Si/Si:Er molecular-beam-epitaxy-grown multinanolayers. This ultranarrow (full width at half maximum below 8 mýeV) emission originating from the uniqueEr-related optical complex, Er-1 center, ensures the best condition to achieve stimulated emission. The experiments were carried out using a combination of the variable stripe length and shifting excitation spot techniques under pulsed and continuous-wave excitations. The comparison of results for both excitation regimes enables to estimate an optical gain within the strong optical losses due to the free carrier absorption. Based on these measurements, the upper limit of the optical gain cross sectionof 10?17 cm2 and the gain coefficient of 8.8 cm?1 are deduced.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121
e-ISSN
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Volume of the periodical
81
Issue of the periodical within the volume
19
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
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UT code for WoS article
000278142000058
EID of the result in the Scopus database
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