Optical gain of the 1.54 ?m emission in MBE-grown Si:Er nanolayers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00357219" target="_blank" >RIV/68378271:_____/10:00357219 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Optical gain of the 1.54 ?m emission in MBE-grown Si:Er nanolayers

Original language description

We present investigations of the optical gain cross section of 1.54 ?m Er-related emission at 4.2 K in Si/Si:Er molecular-beam-epitaxy-grown multinanolayers. This ultranarrow (full width at half maximum below 8 ?eV) emission originating from the unique Er-related optical complex, Er-1 center, ensures the best condition to achieve stimulated emission.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physical Review. B

ISSN

1098-0121

e-ISSN

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Volume of the periodical

81

Issue of the periodical within the volume

19

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

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UT code for WoS article

000278142000058

EID of the result in the Scopus database

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