Interaction of intense ultrashort XUV pulses with silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00335956" target="_blank" >RIV/68378271:_____/09:00335956 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Interaction of intense ultrashort XUV pulses with silicon

Original language description

Single shot radiation damage of bulk silicon induced by ultrashort XUV pulses was studied. The sample was chosen because it is broadly used in XUV optics and detectors where radiation damage is a key issue. It was irradiated at FLASH facility in Hamburg,which provides intense femtosecond pulses at 32.5 nm wavelength. The permanent structural modifications of the surfaces exposed to single shots were characterized by means of phase contrast optical microscopy and atomic force microscopy. Mechanisms of different, intensity dependent stages of the surface damage are described.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Damage to VUV, EUV, and X-ray Optics II

ISBN

9780819476357

ISSN

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e-ISSN

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Number of pages

11

Pages from-to

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Publisher name

SPIE

Place of publication

Bellingham

Event location

Prague

Event date

Apr 21, 2009

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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