Ab initio study of one-dimensional disorder on III-V semiconductor surfaces
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00349214" target="_blank" >RIV/68378271:_____/10:00349214 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Ab initio study of one-dimensional disorder on III-V semiconductor surfaces
Original language description
Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001)and GaAs(001) reconstructions. Deviations in bond lengths due to disorder with respect to the ordered ground state phases are calculated.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/KAN300100802" target="_blank" >KAN300100802: Nanocomposite, ceramic and thin film scintillators</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi C: Current Topics in Solid State Physics
ISSN
1862-6351
e-ISSN
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Volume of the periodical
7
Issue of the periodical within the volume
2
Country of publishing house
DE - GERMANY
Number of pages
4
Pages from-to
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UT code for WoS article
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EID of the result in the Scopus database
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