Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

Result code in IS VaVaI

RIV/68378271:_____/10:00349214 - isvavai.cz

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

Original language description

Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001)and GaAs(001) reconstructions. Deviations in bond lengths due to disorder with respect to the ordered ground state phases are calculated.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

KAN300100802: Nanocomposite, ceramic and thin film scintillators

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi C: Current Topics in Solid State Physics

ISSN

1862-6351

e-ISSN

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Volume of the periodical

7

Issue of the periodical within the volume

2

Country of publishing house

DE - GERMANY

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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