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Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00349214" target="_blank" >RIV/68378271:_____/10:00349214 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

  • Original language description

    Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001)and GaAs(001) reconstructions. Deviations in bond lengths due to disorder with respect to the ordered ground state phases are calculated.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/KAN300100802" target="_blank" >KAN300100802: Nanocomposite, ceramic and thin film scintillators</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica Status Solidi C: Current Topics in Solid State Physics

  • ISSN

    1862-6351

  • e-ISSN

  • Volume of the periodical

    7

  • Issue of the periodical within the volume

    2

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    4

  • Pages from-to

  • UT code for WoS article

  • EID of the result in the Scopus database