Characterization and optical properties of TiO2 prepared by pulsed laserdeposition
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00366495" target="_blank" >RIV/68378271:_____/10:00366495 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Characterization and optical properties of TiO2 prepared by pulsed laserdeposition
Original language description
The contribution reports on fabrication and characterization of TiO2 thin films on Si substrate. The TiO2 thin films are used for photonic devices in optical communication systems. The most important parameter for the waveguide structures is the refractive index. The crystalline TiO2 polymorphs can have different refractive index depending on the structure phase, which is technology dependent. The waveguide structures was prepared by pulsed laser deposition using 248 nm KrF laser source and targets of Ti or rutile in oxygen atmosphere. The optical characterization were done using spectroscopic ellipsometry providing the information about electron band gap values and determining the optical parameters (thickness and refractive index) of prepared TiO2 thin films. Secondary ion mass spectroscopy (SIMS) and secondary electron microscopy (SEM) was done to verify the vertical and chemical structure.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/MEB0810156" target="_blank" >MEB0810156: Oxides for photonic and biocompatible sensoric applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ASDAM 2010-Conference Proceedings-The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
978-1-4244-8575-8
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
301-304
Publisher name
IEEE
Place of publication
Piscataway
Event location
Smolenice
Event date
Oct 25, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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