Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00383781" target="_blank" >RIV/68378271:_____/10:00383781 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1742-6596/245/1/012079" target="_blank" >http://dx.doi.org/10.1088/1742-6596/245/1/012079</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/245/1/012079" target="_blank" >10.1088/1742-6596/245/1/012079</a>

Result language
angličtina
Original language name
Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots
Original language description
We report on low-temperature, micro-photoluminescence study of quantum confinement in MOVPE-grown structures with InAs/GaAs quantum dots (QDs) with GaAs and/or strain reducing InGaAs/GaAs capping. We focus our attention on sharp emission lines, which appear in both structures at energies up to 80 meV below the wetting line emission. Power-dependent measurements confirmed their attribution to single excitons as well as biexcitons. Negative binding energy of biexcitons with systematic dependence on theirenergy was observed. It has been proposed that the investigated emission lines result from radiative recombination in flat non-fully developed QDs in the investigated structure. The attribution is confirmed by transmission electron microscopic analysis of investigated structures.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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