In-situ monitoring of the growth of nanostructured aluminum thin film

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00361263" target="_blank" >RIV/68378271:_____/11:00361263 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/1.3543816" target="_blank" >http://dx.doi.org/10.1117/1.3543816</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/1.3543816" target="_blank" >10.1117/1.3543816</a>

Result language
angličtina
Original language name
In-situ monitoring of the growth of nanostructured aluminum thin film
Original language description
In order to control the nanostructure of aluminum thin films fabricated by RF magnetron sputtering, we made use of in-situ monitoring of electrical and optical properties of the growing layer as well as plasma characterization by mass and optical emission spectroscopy. The electrical conductivity and I-V characteristics were measured. The optical constants were obtained from optical monitoring based on spectral ellipsometry. The relevant models (based on one or two Lorentz oscillators and B-spline functions) were suggested to evaluate the data obtained from themonitoring techniques. The results of the in-situ monitoring were correlated with scanning electron microscope analyses. The nanostructure was effectively manipulated by RF power variation. Optical functions exhibiting plasmonic behavior in the UV range and a strong nonlinear character of I-V curves were obtained for an ultrathin Al film deposited at a lower growth rate.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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