Preparation of InAs/GaAs quantum dots for BEEM/BEES

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00367158" target="_blank" >RIV/68378271:_____/11:00367158 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/11:00367158
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Preparation of InAs/GaAs quantum dots for BEEM/BEES
Original language description
Self-assembled InAs/GaAs QD layer embedded in AlGaAs heterostructure was detected by ballistic electron emission microscopy (BEEM). Ballistic current through QDs is much higher than outside of QDs, and QDs look like dark spots. Ballistic electron emission microscopy (BEES) characteristics (IB/V) were measured on individual QDs. Derivation corresponds to the density of states. Minima in the density of states are assigned to the positions of the quantum levels in the QD. The spectroscopic characteristicsof individual QDs were examined. One-electron p1-like state, one-electron and two-electron ground states and excited two-electron states were found. The Coulomb interaction and exchange energies between two electrons in QDs were also determined.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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