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Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F09%3A00341441" target="_blank" >RIV/68378271:_____/09:00341441 - isvavai.cz</a>

  • Alternative codes found

    RIV/67985882:_____/09:00341441 RIV/67985556:_____/09:00341441

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

  • Original language description

    Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given.Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA202%2F05%2F0242" target="_blank" >GA202/05/0242: Space resolved ballistic electron emission spectroscopy on individual InAs/GaAs dots embedded in AlGaAs barriers</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2009

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Microelectronics Journal

  • ISSN

    0026-2692

  • e-ISSN

  • Volume of the periodical

    40

  • Issue of the periodical within the volume

    3

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    3

  • Pages from-to

  • UT code for WoS article

    000264694700032

  • EID of the result in the Scopus database