Quantum dots
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522011" target="_blank" >RIV/68378271:_____/19:00522011 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/9781119313021.ch6" target="_blank" >http://dx.doi.org/10.1002/9781119313021.ch6</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/9781119313021.ch6" target="_blank" >10.1002/9781119313021.ch6</a>
Alternative languages
Result language
angličtina
Original language name
Quantum dots
Original language description
This chapter focuses on quantum dots (QDs) embedded inside a semiconductor structure. It talks about metalorganic vapor phase epitaxy (MOVPE) QD preparation only. One can distinguish QD types according to growth modes, growth procedures, materials used, and structures with strain‐reducing layers, types of interfaces, and spatial arrangement of QDs (uncoordinated, array, and single/individual QDs). The three main growth technological procedures used for MOVPE preparation of QDs embedded in the structure are self‐assembled Stranski–Krastanov (SK) growth mode, formation of QDs in prepatterned inverted pyramids, and droplet epitaxy. The most widely used procedure is self‐assembling of QDs in SK growth mode. MOVPE growth parameters such as growth temperature, material type of precursors, reactor pressure, precursor flow ratio, total pressure and flow, complex purity of materials, precursors, and reactor setup can strongly influence the structure and device parameters, as well.n
Czech name
—
Czech description
—
Classification
Type
C - Chapter in a specialist book
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LO1603" target="_blank" >LO1603: Centre of Technology and Advanced Structure Analysis of Materials with Application Impact</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Book/collection name
Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
ISBN
9781119313014
Number of pages of the result
42
Pages from-to
175-216
Number of pages of the book
584
Publisher name
John Wiley & Sons Ltd.
Place of publication
Chichester
UT code for WoS chapter
—