Structures with combined In(Ga)As and Ga(As)Sb quantum dots

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00399204" target="_blank" >RIV/68378271:_____/13:00399204 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Structures with combined In(Ga)As and Ga(As)Sb quantum dots
Original language description
We will present results obtained on MOVPE structures with two QD layers from In(Ga)As and Ga(As)Sb in which combined QDs are self assembled one on the top of the other. The Sb atoms segregate above InAs QD, which helps to form a new self assembled combined QD structure with In(Ga)As QD for electrons and holes and Ga(As)Sb QD for holes only. A variety of different GaAsSb QD morphology depending on the GaAsSb composition can be achieved. AFM images of lens shaped, doughnut and laterally doubled Ga(As)Sb QDs will be presented. This combined QD system forms type I or type II band alignment depending on the QDs composition. However, we have experimentally demonstrated that the type I/type II transition does not depend only on the composition of the Ga(As)Sblayer, but also on other structure parameters, like QD size or intensity of electric field. The behavior of this structure in electrical field will be demonstrated and potential application will be discussed.
Czech name
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Czech description
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Project
<a href="/en/project/GA13-15286S" target="_blank" >GA13-15286S: GaSb based nano-heterostructures with deep quantum well</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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