Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00399146" target="_blank" >RIV/68378271:_____/13:00399146 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4829027" target="_blank" >http://dx.doi.org/10.1063/1.4829027</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4829027" target="_blank" >10.1063/1.4829027</a>
Alternative languages
Result language
angličtina
Original language name
Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
Original language description
Two types of QDs, InAs and GaAsSb, are combined in self assembled vertically correlated QD structures. The first QD layer is formed by InAs QDs and the second by vertically correlated GaAsSb QDs. Combined QD layers are separated by a triangular GaAsSb barrier. The structure can be prepared as type-I, with both electrons and holes confined in InAs QDs, exhibiting a strong photoluminescence, or type-II, with electrons confined in InAs QDs and holes in GaAsSb QDs. The presence of the thin triangular GaAsSbbarrier enables the realization of different quantum level alignment between correlated InAs and GaAsSb QDs, which can be adjusted by structure parameters as type-I or type-II like for ground and excited states separately. The position of holes in thistype of structure is influenced by the presence of the triangular barrier or by the size and composition of the GaAsSb QDs. The electron-hole wavefunction overlap and the PL intensity alike can also be controlled by structure engineering.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
114
Issue of the periodical within the volume
17
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
"174305-1"-"174305-5"
UT code for WoS article
000327591900057
EID of the result in the Scopus database
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