Photoluminescence in an electric field of InAs/GaAs QDs covered by GaAsSb strain reducing layer
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455015" target="_blank" >RIV/68378271:_____/15:00455015 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Photoluminescence in an electric field of InAs/GaAs QDs covered by GaAsSb strain reducing layer
Original language description
We research the impact of this electric field, its orientation and intensity on QDs with GaAsSb strain reducing layer due to the suitability of this type of structure for application in laser (type I) as well as detector (type II) structures. We focus onthe transition between the type I and the type II structure. The type of heterostructure is influenced by the structure composition and may be changed by an electric field. Negative electric field supports the heterostructure to remain type I, positiveelectric field supports the heterostructure to become type II.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů