Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00375018" target="_blank" >RIV/68378271:_____/11:00375018 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.3641899" target="_blank" >http://dx.doi.org/10.1063/1.3641899</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.3641899" target="_blank" >10.1063/1.3641899</a>
Alternative languages
Result language
angličtina
Original language name
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
Original language description
Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during ?lm deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/?lm interface is nevertheless improved with as-depositedlayers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area ef?ciencies up to 21%.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
99
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
3
Pages from-to
"123506/1"-"123506/3"
UT code for WoS article
000295853500075
EID of the result in the Scopus database
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