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Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00375018" target="_blank" >RIV/68378271:_____/11:00375018 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.3641899" target="_blank" >http://dx.doi.org/10.1063/1.3641899</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.3641899" target="_blank" >10.1063/1.3641899</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

  • Original language description

    Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during ?lm deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/?lm interface is nevertheless improved with as-depositedlayers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area ef?ciencies up to 21%.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2011

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Physics Letters

  • ISSN

    0003-6951

  • e-ISSN

  • Volume of the periodical

    99

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    3

  • Pages from-to

    "123506/1"-"123506/3"

  • UT code for WoS article

    000295853500075

  • EID of the result in the Scopus database