Annealing of polycrystalline thin film silicon solar cells in water vapour at sub-atmospheric pressures

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00434815" target="_blank" >RIV/68378271:_____/14:00434815 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21230/14:00221516

Result on the web

<a href="http://dx.doi.org/10.14311/AP.2014.54.0341" target="_blank" >http://dx.doi.org/10.14311/AP.2014.54.0341</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.14311/AP.2014.54.0341" target="_blank" >10.14311/AP.2014.54.0341</a>

Result language

angličtina

Original language name

Annealing of polycrystalline thin film silicon solar cells in water vapour at sub-atmospheric pressures

Original language description

Thin ?lm polycrystalline silicon (poly-Si) solar cells were annealed in water vapour at pressures below atmospheric pressure. The PN junction of the sample was contacted by measuring probes directly in the pressure chamber ?lled with steam during passivation. The Suns-VOC method and a Lock-in detector were used to monitor the e?ect of water vapour on VOC of the solar cell during the whole passivation process (in-situ). The open-circuit voltage of a solar cell at these temperatures is lower than at roomtemperature. Nevertheless, the voltage response of the solar cell to the light ?ash used during the Suns-VOC measurements was well observable. The temperature dependences for multicrystalline wafer-based and polycrystalline thin ?lm solar cells were measured and compared. In-situ observation proved that there was the required sensitivity to changing VOC at elevated temperatures during the process.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JE - Non-nuclear power engineering, energy consumption and utilization

OECD FORD branch

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Project

<a href="/en/project/7E10061" target="_blank" >7E10061: Zlepšené fotovoltaické moduly založené na polykrystalickém křemíku na skle (Improved Polycrystalline-Silicon Modules on Glass Substrates)</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Acta polytechnica

ISSN

1210-2709

e-ISSN

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Volume of the periodical

54

Issue of the periodical within the volume

5

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

7

Pages from-to

341-347

UT code for WoS article

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EID of the result in the Scopus database

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