Characteristics of nanocrystalline diamond SGFETs under cell culture conditions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00375023" target="_blank" >RIV/68378271:_____/11:00375023 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Characteristics of nanocrystalline diamond SGFETs under cell culture conditions
Original language description
Characterization of electronic properties of protein diamond interface by using microscopic (20 ?m) solution-gated field-effect transistors (SGFET) based on H-terminated nanocrystalline diamond films (NCD) on glass. We show that NCD films with grain sizes down to 80 nm and thickness down to 100 nm are operational as SGFETs.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
WDS'11 Proceedings of Contributed Papers: Part III: Physics
ISBN
978-80-7378-186-6
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
160-165
Publisher name
MATFYZPRESS
Place of publication
Praha
Event location
Prague
Event date
May 31, 2011
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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