Influence of buffers and culture media on diamond solution-gated field effect transistors regarding stability and memory effect

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00480307" target="_blank" >RIV/68378271:_____/17:00480307 - isvavai.cz</a>

Alternative codes found

RIV/68407700:21230/17:00315832

Result on the web

<a href="http://dx.doi.org/10.3390/proceedings1040525" target="_blank" >http://dx.doi.org/10.3390/proceedings1040525</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/proceedings1040525" target="_blank" >10.3390/proceedings1040525</a>

Result language

angličtina

Original language name

Influence of buffers and culture media on diamond solution-gated field effect transistors regarding stability and memory effect

Original language description

The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect transistor (SGFET) under the influence of inorganic and organic compounds were studied. Studied compounds included three different buffer solutions (Phosphate, HEPES, McIlvaine buffer) and commonly used culture media (fibronectin, albumin and fetal bovine serum). It was found that buffers with the same pH of 7.4 caused different voltage shifts in transfer characteristics. This effect was reversible which indicates the surface stability of the hydrogen-terminated diamond during repeated measurements. In contrast to this observation, the SGFET sensitivity decreased after applying the culture solutions which we attribute to the permanently adsorbed bio-layer formed on the SGFET channel sensing area.n

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings (Basel, Switzerland)

ISBN

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ISSN

2504-3900

e-ISSN

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Number of pages

4

Pages from-to

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Publisher name

MDPI

Place of publication

Basel

Event location

Paris

Event date

Sep 3, 2017

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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