Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00470423" target="_blank" >RIV/68378271:_____/17:00470423 - isvavai.cz</a>

Alternative codes found

RIV/67985882:_____/17:00470423 RIV/68407700:21230/17:00242871

Result on the web

<a href="http://dx.doi.org/10.1016/j.apsusc.2016.05.003" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2016.05.003</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2016.05.003" target="_blank" >10.1016/j.apsusc.2016.05.003</a>

Result language

angličtina

Original language name

Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors

Original language description

Diamond thin films provide unique features as substrates for cell cultures and as bio-electronic sensors. Here we employ solution-gated field effect transistors (SGFET) based on nanocrystalline diamond thin films with H-terminated surface which exhibits the sub-surface p-type conductive channel. We study an influence of yeast cells (Saccharomyces cerevisiae) on electrical characteristics of the diamond SGFETs. Two different cell culture solutions (sucrose and yeast peptone dextrose–YPD) are used, with and without the cells. We have found that transfer characteristics of the SGFETs exhibit a negative shift of the gate voltage by −26 mV and −42 mV for sucrose and YPD with cells in comparison to blank solutions without the cells. This effect is attributed to a local pH change in close vicinity of the H-terminated diamond surface due to metabolic processes of the yeast cells.n

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10610 - Biophysics

Project

<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Volume of the periodical

395

Issue of the periodical within the volume

Feb

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

6

Pages from-to

214-219

UT code for WoS article

000390428300036

EID of the result in the Scopus database

2-s2.0-84967155237