Influence of Non-adherent Yeast Cells on Electrical Characteristics of Diamond-based Field-effect Transistors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00233157" target="_blank" >RIV/68407700:21230/15:00233157 - isvavai.cz</a>
Result on the web
<a href="http://www.nanocon.eu/en/" target="_blank" >http://www.nanocon.eu/en/</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Influence of Non-adherent Yeast Cells on Electrical Characteristics of Diamond-based Field-effect Transistors
Original language description
Diamond thin films were used as the substrate for cell cul-ture and as the bio-electronic sensor. Here we studied the in-fluence of yeast cells (Saccharomyces cerevisiae) on the electrical characteristics of nanocrystalline diamond-based solution-gated field effect transistor (SGFET). The working principle of diamond-based SGFETs lies on the H-terminated active surface with subsurface p-type channel. In present study two different cell culture solutions (sucrose and yeast peptone dextrose (YPD)) were used, with and without yeast cells. The transfer characteristics of SGFETs shown a negative shift of the gate voltage to higher values for both cell solutions, i.e. sucrose and YPD with cells, by -26 mV and -42 mV, respectively, in comparison to blank so-lutions without cells. This effect was attributed to change in pH in close vicinity at the H-terminated diamond surface due to metabolic processes of yeast cells. The pH sensitivi-ties of the diamond-based SGFETs and the role of negative surface charge of yeast cells on the SGFETs electrical char-acteristics are discussed.
Czech name
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Czech description
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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