The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00377179" target="_blank" >RIV/68378271:_____/12:00377179 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.3681329" target="_blank" >http://dx.doi.org/10.1063/1.3681329</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.3681329" target="_blank" >10.1063/1.3681329</a>
Alternative languages
Result language
angličtina
Original language name
The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots
Original language description
The effect of the In-flush technique on the optical anisotropy of InAs/GaAs quantum dots has been investigated by low temperature microluminescence measurements of the splitting of the emission lines related to single neutral excitons confined to the quantum dots. It is proposed that significantly smaller anisotropy in a structure grown by the In-flush technique as compared to a structure grown without this procedure is due to the reduction in the strain generated within the GaAs barrier when using theIn-flush procedure.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
111
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
"033510-1"-"033510-4"
UT code for WoS article
000301029800026
EID of the result in the Scopus database
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