Quantum confinement in InAs/GaAs systems with self-assembled quantum dots grown using in-flush technique
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00373389" target="_blank" >RIV/68378271:_____/11:00373389 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Quantum confinement in InAs/GaAs systems with self-assembled quantum dots grown using in-flush technique
Original language description
The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots by the microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. The In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Acta Physica Polonica. A
ISSN
0587-4246
e-ISSN
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Volume of the periodical
119
Issue of the periodical within the volume
5
Country of publishing house
PL - POLAND
Number of pages
3
Pages from-to
624-626
UT code for WoS article
000290502500016
EID of the result in the Scopus database
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