Electronic transport in intrinsic H-terminated nanocrystaline diamond with various grain size

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00377280" target="_blank" >RIV/68378271:_____/12:00377280 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Electronic transport in intrinsic H-terminated nanocrystaline diamond with various grain size
Original language description
Both effective conductivity and Hall mobility of H-NCD were found to strongly decrease with the diminishing grain size. Effective Hall concentrations (to 1017 m-2) correspond to the true hole concentrations on the surface of the grain interiors. The effective Hall mobility is a robust parameter with respect to the surface conditions.
Czech name
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Czech description
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Project
<a href="/en/project/GAP204%2F10%2F0212" target="_blank" >GAP204/10/0212: Size effects and electron transport in boron-doped and hydrogenated diamond</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the International Workshop on Diamond Nanotechnology and Science Progress - DINAS 2011
ISBN
978-80-260-1593-2
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
11-13
Publisher name
Institute of Physics ASCR
Place of publication
Prague
Event location
Prague
Event date
Jun 15, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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