Ultrafast carrier response of Br+ -irradiated In0.53Ga0.47As excitedat telecommunication wavelengths

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00377890" target="_blank" >RIV/68378271:_____/12:00377890 - isvavai.cz</a>

Alternative codes found

RIV/67985882:_____/12:00377890 RIV/44555601:13440/12:43883972

Result on the web

<a href="http://dx.doi.org/10.1063/1.4709441" target="_blank" >http://dx.doi.org/10.1063/1.4709441</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4709441" target="_blank" >10.1063/1.4709441</a>

Result language

angličtina

Original language name

Ultrafast carrier response of Br+ -irradiated In0.53Ga0.47As excitedat telecommunication wavelengths

Original language description

We present results of infrared pump-terahertz probe experiments applied to a set of In0.53Ga0.47As films irradiated with heavy ions (Br+). Photoexcitation at 1400 nm (0.89 eV) allowed us to characterize the response close to telecommunications' wavelengths whilst avoiding the intervalley carrier scattering observed when a shorter wavelength excitation is used. The lifetimes and mobilities of both electrons and holes were retrieved, and the trap filling and carrier diffusion were clearly observed. The In0.53Ga0.47As film irradiated by the dose of 1012 cm-2 exhibits simultaneously ultrashort electron lifetime (300 fs) and very high electron mobility (2800 cm2V-11s-1). These findings are particularly important for the design of terahertz emitters controlled by lasers operating at standard telecommunication wavelengths.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

111

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

8

Pages from-to

"093721-1"-"093721-8"

UT code for WoS article

000304109900070

EID of the result in the Scopus database

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