Layer-resolved photoelectron diffraction: electron attenuation anisotropy in GaAs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00384858" target="_blank" >RIV/68378271:_____/12:00384858 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.elspec.2012.06.011" target="_blank" >http://dx.doi.org/10.1016/j.elspec.2012.06.011</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.elspec.2012.06.011" target="_blank" >10.1016/j.elspec.2012.06.011</a>
Alternative languages
Result language
angličtina
Original language name
Layer-resolved photoelectron diffraction: electron attenuation anisotropy in GaAs
Original language description
Photoelectron diffraction was used to get polar plots of the low-energy photoemission intensities from AlAs monolayer buried 2, 3 and 4 GaAs monolayers below the GaAs(0 0 1)-c(44) reconstructed surface.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electron Spectroscopy and Related Phenomena
ISSN
0368-2048
e-ISSN
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Volume of the periodical
185
Issue of the periodical within the volume
5-7
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
184-187
UT code for WoS article
000308518000010
EID of the result in the Scopus database
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