Fabrication of nanostructures on Si(100) and GaAs(1 0 0) by local anodic oxidation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F06%3APU63612" target="_blank" >RIV/00216305:26210/06:PU63612 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Fabrication of nanostructures on Si(100) and GaAs(1 0 0) by local anodic oxidation

Original language description

Atomic force microscopes have become useful tools not only for observing surface morphology and nanostructure topography but also for fabrication of various nanostructures itself. In this paper, the application of AFM for fabrication of nanostructures bylocal anodic oxidation (LAO) of Si(1 0 0) and GaAs(1 0 0) surfaces is presented. A special attention is paid to finding relations between the size of oxide nanolines (height and half-width) and operational parameters as tip-sample voltage and tip writing speed. It was demonstrated that the formation of silicon oxide lines obeys the Cabrera-Mott theory, i.e. the height of the lines grow, linearly with tip-sample voltage and is inversely proportional to logarithm of tip writing speed. As for GaAs substrates, the oxide line height grows linearly with tip-sample voltage as well but LAO exhibits a certain deviation from this theory. It is shown that the selective chemical etching of Si or GaAs ultrathin films processed by LAO makes it possi

Czech name

Vytváření nanostruktur na Si(100) a GaAs(1 0 0) pomocí lokální anodické oxidace

Czech description

Vytváření nanostruktur na Si(100) a GaAs(1 0 0) pomocí lokální anodické oxidace

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2006

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Surface Science

ISSN

0169-4332

e-ISSN

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Volume of the periodical

253

Issue of the periodical within the volume

5

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

6

Pages from-to

2373-2378

UT code for WoS article

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EID of the result in the Scopus database

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