Fabrication of nanostructures by AFM local Oxidation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F01%3APU23138" target="_blank" >RIV/00216305:26210/01:PU23138 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Fabrication of nanostructures by AFM local Oxidation
Original language description
In the paper AFM studies of microstructures etched by ion beams into Si and Au surfaces, and AFM local anodic oxidation of Ti thin films is presented. Using the AFM technique the etching limits of inert atoms in production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half-width of the lines did not depend linearly on this voltage. The results are useful forrstudies of quantum effects in nanostructures and experiments in fabrication of nanoelectronic devices (e.g. SET).
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Sborník příspěvků konference Nové trendy ve fyzice
ISBN
80-214-1992-X
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
394-399
Publisher name
FEI VUT v Brně
Place of publication
Brno
Event location
Brno, FEI VUT
Event date
Nov 15, 2001
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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