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Application of AFM in Microscopy and in Fabrication of Micro/Nanostructures

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F02%3APU29189" target="_blank" >RIV/00216305:26210/02:PU29189 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Application of AFM in Microscopy and in Fabrication of Micro/Nanostructures

  • Original language description

    In the paper AFM studies of microstructures etched by ion beams into Si and Au surfaces, and AFM local anodic oxidation of Ti thin films is presented. Using the AFM technique the etching limits of inert atoms in production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half-width of the lines did not depend linearly on this voltage. The results are useful forrstudies of quantum effects in nanostructures and experiments in fabrication of nanoelectronic devices (e.g. SET).

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ME%20480" target="_blank" >ME 480: Application of the Scanning Tunneling Microscopy and Spectroscopy for the study of atomic surface strutures</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2002

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Surface and Interface Analysis

  • ISSN

    0142-2421

  • e-ISSN

  • Volume of the periodical

    34

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    4

  • Pages from-to

    352-355

  • UT code for WoS article

  • EID of the result in the Scopus database