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?c-Si solar cells by direct deposition with APCVD

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00386627" target="_blank" >RIV/68378271:_____/12:00386627 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.4229/27thEUPVSEC2012-3CV.2.7" target="_blank" >http://dx.doi.org/10.4229/27thEUPVSEC2012-3CV.2.7</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.4229/27thEUPVSEC2012-3CV.2.7" target="_blank" >10.4229/27thEUPVSEC2012-3CV.2.7</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    ?c-Si solar cells by direct deposition with APCVD

  • Original language description

    The rapid thermal direct deposition of micro-crystalline silicon (?c-Si) layers by atmospheric pressure chemical vapour deposition (APCVD) can be done on different intermediate layers. The deposition is done at temperatures between 850 °C and 1150 °C. Adeposition rate of 1.6 ?m/min has been achieved using standard process conditions. The microcrystalline structure changes depending on the deposition temperature and the layer thickness. Electron backscatter diffraction measurements show grain sizes of 0.5-10.0 ?m with a columnar structure. Based on these process parameters and material properties the ?c-Si layers have been simulated and optimised for two different solar cell concepts featuring different metallisation schemes and a comparison between epitaxial ?c-Si emitter, diffused POCl3 emitter, and plasma enhanced chemical vapour deposition (PECVD) deposited a-Si heterojunction solar cells.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition

  • ISBN

    3-936338-28-0

  • ISSN

  • e-ISSN

  • Number of pages

    7

  • Pages from-to

    2386-2392

  • Publisher name

    WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG

  • Place of publication

    München

  • Event location

    Frankfurt

  • Event date

    Sep 24, 2012

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article