Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F16%3APU118926" target="_blank" >RIV/00216305:26220/16:PU118926 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Impact of the SiNX Thickness on Passivation Quality and Contact Resistivity of Silicon Solar Cell
Original language description
In this work the influence of thickness of Silicon Nitride (SiNX) layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on passivation quality and contact resis-tivity (ρC) of n-type Passivated Emitter Rear Totally-diffused (n-PERT) cell was investigated. The solar cell structure comprises front boron emitter and a phosphorous back surface field (BSF) with SiNX layers on both sides for surface passivation. Contacts are made by screen printed and fired through metallization using commercial silver (Ag) paste.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 22nd Conference STUDENT EEICT 2016
ISBN
978-80-214-5350-0
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
690-695
Publisher name
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Place of publication
Brno
Event location
Brno
Event date
Apr 28, 2016
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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