A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU125231" target="_blank" >RIV/00216305:26220/17:PU125231 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.egypro.2017.09.301" target="_blank" >http://dx.doi.org/10.1016/j.egypro.2017.09.301</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.egypro.2017.09.301" target="_blank" >10.1016/j.egypro.2017.09.301</a>
Alternative languages
Result language
angličtina
Original language name
A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack
Original language description
In this study we investigated the passivation quality of boron doped emitters by varying the composition of SiO2/SiNX stack layers. For this purpose, n-PERT (passivated emitter, rear totally-diffused) solar cells with boron doped front side emitter and phosphorous doped back-surface-field (BSF), as well as symmetrical boron doped structures, were fabricated on 6-inch n-type wafers.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Energy Procedia
ISSN
1876-6102
e-ISSN
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Volume of the periodical
neuveden
Issue of the periodical within the volume
124
Country of publishing house
TH - THAILAND
Number of pages
952
Pages from-to
288-294
UT code for WoS article
000426791600039
EID of the result in the Scopus database
2-s2.0-85031920795