Screen Printed Metallization on p+ Emitters of n-Type Silicon Solar Cells

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F16%3APU121548" target="_blank" >RIV/00216305:26220/16:PU121548 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Screen Printed Metallization on p+ Emitters of n-Type Silicon Solar Cells

Original language description

In this study we designed and fabricated n-PERT (Passivated Emitter, Rear Totally Diffused) solar cells and we investigated the effect of different boron emitter profiles (emitter surface concentration and emitter junction depth) on the cell performance. The emitter was varying in the depth demitter and the peak surface carrier concentration NA, and so the resulting sheet resistance RSh was changing between 60 Ω/sq and 140 Ω/sq. The value of RSh of Back Surface Field (BSF) layer was 75 Ω/sq in all cases. We metalized boron emitters by a commercial firing- through AgAl paste or a pure Ag paste and we varied the metallization fraction to extract the recombination current density J0-met under the metal contact for each emitter/paste.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Imaps Flash Conference

ISBN

9788021454163

ISSN

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e-ISSN

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Number of pages

5

Pages from-to

1-5

Publisher name

Neuveden

Place of publication

Neuveden

Event location

Brno

Event date

Nov 3, 2016

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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